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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES * Low On-Resistance RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) 8.0 0.2 4.5 0.2 * Low Ciss Ciss = 860 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 13.0 0.2 1 23 2.5 0.2 1.4 0.2 1.4 0.2 0.5 0.1 0.5 0.1 0.5 0.1 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) Tch Tstg IAS EAS 60 20 10 40 1.8 150 10 10 V V A A W C A mJ Gate Protection Diode Source Gate Body Diode Drain MP-10 (ISOLATED TO-220) Total Power Dissipation (TA = 25 C) PT -55 to +150 C ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 The information in this document is subject to change without notice. Document No. TC-2494 (O. D. No. TC-8032) Date Published November 1994 P Printed in Japan (c) 1994 2SK2413 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 860 440 110 15 90 75 30 24 3.0 6.0 1.0 95 250 1.0 7.0 MIN. TYP. 50 70 1.6 12 10 10 MAX. 70 95 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 5.0 A VGS = 4 V, ID = 5.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 5.0 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 20 A VDD = 48 V VGS = 10 V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 di/dt = 100 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG VGS = 20 0 V 50 Test Circuit 2 Switching Time D.U.T. L PG. RG RG = 10 RL VGS Wave Form VGS 10 % 0 VGS (on) 90 % VDD BVDSS VDS VGS 0 t VDD ID Wave Form ID 10 % 0 td (on) 90 % 90 % ID 10 % tr ton td (off) toff tf IAS ID VDD Starting Tch t = 1 s Duty Cycle 1 % Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 VDD RL The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2413 Radial Tape Specification Dimension (unit: mm) Item P2 P P h T h Component Body Length along Tape Component Body Height Component Body Width Component Lead Width Dimension A1 A T d I1 P P0 P2 F1, F2 8.0 0.2 13.0 0.2 4.5 0.2 0.5 0.1 2.5 MIN. 12.7 1.0 12.7 0.3 6.35 0.5 2.5 1.0 1.3 18.0 +1.0 -0.5 +0.4 -0.1 A1 A H1 H0 H W2 Lead Wire Enclosure Component Center Pitch W0 W1 l1 Feedhole Pitch W Feedhole Center to Center Lead Component Lead Pitch F1 F2 d P0 t D0 Deflection Front or Rear Deflection Left or Right Carrier Strip Width Adhesive Tape Width Feedhole Location Adhesive Tape Position Height of Seating Plane Feedhole to upper of Component Feedhole to Bottom of Component Tape Feedhole Diameter Overall Taped Package Thickness h P W W0 W1 W2 H0 H1 H D0 t 5.0 MIN. 9.0 0.5 0.7 MIN. 16.0 0.5 32.2 MAX. 20.0 MAX. 4.0 0.2 0.7 0.2 3 2SK2413 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 2.0 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 80 1.6 60 40 1.2 0.8 20 0 0.4 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ta - Ambient Temperature - C Ta - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 50 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = 10 V VGS = 6 V 30 VGS = 4 V 20 PW = ID(pulse) ID - Drain Current - A RD S t V (on) GS Li = mit 10 ed V) ID (DC) (a 10 ID - Drain Current - A 10 40 s s 10 0 1 m s Po w er s m d 10 ite s m Lim 0 20 tion ipa Di ss 10 TA = 25 C Single Pulse 1 0.1 1 10 100 0 2 4 6 8 10 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V 100 ID - Drain Current - A 10 TA = -25 C 25 C 75 C 125 C 1 0 1 2 3 4 5 6 7 8 VGS - Gate to Source Voltage - V 4 2SK2413 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth (t) - Transient Thermal Resistance - C/W 100 Rth (ch-a) = 69.4 C/W 10 1 0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s RDS (on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 100 80 60 40 20 0 0 10 VGS - Gate to Source Voltage - V 20 Pulsed ID = 5 A 1 1 10 100 ID - Drain Current - A RDS (on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 140 120 100 80 60 40 20 0 1 10 ID - Drain Current - A 100 VGS = 10 V VGS = 4 V VGS (off) - Gate to Source Cutoff Voltage - V Pulsed 2.0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.5 1.0 0.5 0 -50 0 50 100 150 Tch - Channel Temperature - C 5 2SK2413 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 ISD - Diode Forward Current - A 120 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed RDS (on) - Drain to Source On-State Resistance - m 10 V 10 VGS = 0 VGS = 4 V 80 VGS = 10 V 40 1 0 -50 ID = 5 A 0 50 100 150 0.1 0 1.0 VSD - Source to Drain Voltage - V 2.0 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns VGS = 0 f = 1 MHz 1000 SWITCHING CHARACTERISTICS tr 100 tf 10 td (on) td (off) 1000 Ciss Coss Crss 100 10 1 10 VDS - Drain to Source Voltage - V 100 1.0 0.1 1.0 10 ID - Drain Current - A VDD = 30 V VGS = 10 V RG = 10 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns 80 70 60 50 40 30 20 10 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 10 A VDD = 48 V 14 12 VDS VGS 10 8 6 4 2 0 0 10 20 30 40 10 0.1 1.0 di/dt = 50 A/s VGS = 0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 6 VGS - Gate to Source Voltage - V 2SK2413 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Energy - mJ dt - Energy Derating Factor - % 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 IAS 10 A 80 10 IAS = 10 A EAS =1 60 0m J 40 1.0 VDD = 30 V VGS = 20 V 0 RG = 25 10 100 20 0 25 1m 10 m 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2413 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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